Chemical states and ferromagnetism in heavily Mn-substituted zinc oxide thin films

Q. Shao; P. S. Ku; X. L. Wang; J. A. Zapien; C. W. Leung; F. Borgatti; A. Gambardella; V. Dediu; R. Ciprian; A. Ruotolo

doi:10.1063/1.4871759

Chemical states and ferromagnetism in heavily Mn-substituted zinc oxide thin films

Q. Shao, P. S. Ku, X. L. Wang, J. A. Zapien, C. W. Leung, F. Borgatti, A. Gambardella, V. Dediu, R. Ciprian, A. Ruotolo

Istituti Ortopedici Rizzoli

Research output: Contribution to journal › Article › peer-review

Abstract

A concentration of Manganese as high as 8% was successfully diluted into Zinc Oxide epitaxial films deposited by pulsed laser deposition. The films showed strong ferromagnetism with a large coercivity. Low temperature X-ray absorption spectroscopy measurements indicated that all the Manganese ions substitute for Zinc sites of the wurtzite lattice in the valency of +2. Photoluminescence measurements excluded the presence of Zinc vacancies, as well as Zn interstitials. All the magnetic moments measured were to ascribe to the formation of bound magnetic polarons, with no other contribution due to Manganese-secondary phases or Zinc vacancy-mediated double exchange interaction.

Original language	English
Article number	153902
Journal	Journal of Applied Physics
Volume	115
Issue number	15
DOIs	https://doi.org/10.1063/1.4871759
Publication status	Published - Apr 21 2014

ASJC Scopus subject areas

Physics and Astronomy(all)

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abstract = "A concentration of Manganese as high as 8% was successfully diluted into Zinc Oxide epitaxial films deposited by pulsed laser deposition. The films showed strong ferromagnetism with a large coercivity. Low temperature X-ray absorption spectroscopy measurements indicated that all the Manganese ions substitute for Zinc sites of the wurtzite lattice in the valency of +2. Photoluminescence measurements excluded the presence of Zinc vacancies, as well as Zn interstitials. All the magnetic moments measured were to ascribe to the formation of bound magnetic polarons, with no other contribution due to Manganese-secondary phases or Zinc vacancy-mediated double exchange interaction.",

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T1 - Chemical states and ferromagnetism in heavily Mn-substituted zinc oxide thin films

AU - Shao, Q.

AU - Ku, P. S.

AU - Wang, X. L.

AU - Zapien, J. A.

AU - Leung, C. W.

AU - Borgatti, F.

AU - Gambardella, A.

AU - Dediu, V.

AU - Ciprian, R.

AU - Ruotolo, A.

PY - 2014/4/21

Y1 - 2014/4/21

N2 - A concentration of Manganese as high as 8% was successfully diluted into Zinc Oxide epitaxial films deposited by pulsed laser deposition. The films showed strong ferromagnetism with a large coercivity. Low temperature X-ray absorption spectroscopy measurements indicated that all the Manganese ions substitute for Zinc sites of the wurtzite lattice in the valency of +2. Photoluminescence measurements excluded the presence of Zinc vacancies, as well as Zn interstitials. All the magnetic moments measured were to ascribe to the formation of bound magnetic polarons, with no other contribution due to Manganese-secondary phases or Zinc vacancy-mediated double exchange interaction.

AB - A concentration of Manganese as high as 8% was successfully diluted into Zinc Oxide epitaxial films deposited by pulsed laser deposition. The films showed strong ferromagnetism with a large coercivity. Low temperature X-ray absorption spectroscopy measurements indicated that all the Manganese ions substitute for Zinc sites of the wurtzite lattice in the valency of +2. Photoluminescence measurements excluded the presence of Zinc vacancies, as well as Zn interstitials. All the magnetic moments measured were to ascribe to the formation of bound magnetic polarons, with no other contribution due to Manganese-secondary phases or Zinc vacancy-mediated double exchange interaction.

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Chemical states and ferromagnetism in heavily Mn-substituted zinc oxide thin films

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