Diffusion of boron in silicon during post-implantation annealing

S. Solmi, F. Baruffaldi, R. Canteri

Research output: Contribution to journalArticle

158 Citations (Scopus)

Abstract

The diffusion of B implanted in Si has been investigated at different concentrations in a wide range of experimental conditions (temperature from 800 to 1000 °C and time from 10 s to 8 h) by using furnace and rapid thermal treatments. In particular, the transient enhanced diffusion induced by the implantation damage in the early phase of the annealing and the precipitation occurring in concomitance with the diffusion for dopant concentration exceeding the solid solubility have been extensively analyzed. A simulation program taking these phenomena into account has been developed by modifying the supreme iii code. A satisfactory agreement with experimental data has been obtained for all the investigated conditions. The model represents a significative improvement of the diffusion simulation of B implanted in crystalline Si. In fact, the more commonly used codes of process simulation do not evaluate adequately the effects of the above considered phenomena.

Original languageEnglish
Pages (from-to)2135-2142
Number of pages8
JournalJournal of Applied Physics
Volume69
Issue number4
DOIs
Publication statusPublished - 1991

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implantation
boron
annealing
silicon
simulation
furnaces
solubility
damage
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Diffusion of boron in silicon during post-implantation annealing. / Solmi, S.; Baruffaldi, F.; Canteri, R.

In: Journal of Applied Physics, Vol. 69, No. 4, 1991, p. 2135-2142.

Research output: Contribution to journalArticle

@article{cc64485388b94df18c387ad27783cb00,
title = "Diffusion of boron in silicon during post-implantation annealing",
abstract = "The diffusion of B implanted in Si has been investigated at different concentrations in a wide range of experimental conditions (temperature from 800 to 1000 °C and time from 10 s to 8 h) by using furnace and rapid thermal treatments. In particular, the transient enhanced diffusion induced by the implantation damage in the early phase of the annealing and the precipitation occurring in concomitance with the diffusion for dopant concentration exceeding the solid solubility have been extensively analyzed. A simulation program taking these phenomena into account has been developed by modifying the supreme iii code. A satisfactory agreement with experimental data has been obtained for all the investigated conditions. The model represents a significative improvement of the diffusion simulation of B implanted in crystalline Si. In fact, the more commonly used codes of process simulation do not evaluate adequately the effects of the above considered phenomena.",
author = "S. Solmi and F. Baruffaldi and R. Canteri",
year = "1991",
doi = "10.1063/1.348740",
language = "English",
volume = "69",
pages = "2135--2142",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

TY - JOUR

T1 - Diffusion of boron in silicon during post-implantation annealing

AU - Solmi, S.

AU - Baruffaldi, F.

AU - Canteri, R.

PY - 1991

Y1 - 1991

N2 - The diffusion of B implanted in Si has been investigated at different concentrations in a wide range of experimental conditions (temperature from 800 to 1000 °C and time from 10 s to 8 h) by using furnace and rapid thermal treatments. In particular, the transient enhanced diffusion induced by the implantation damage in the early phase of the annealing and the precipitation occurring in concomitance with the diffusion for dopant concentration exceeding the solid solubility have been extensively analyzed. A simulation program taking these phenomena into account has been developed by modifying the supreme iii code. A satisfactory agreement with experimental data has been obtained for all the investigated conditions. The model represents a significative improvement of the diffusion simulation of B implanted in crystalline Si. In fact, the more commonly used codes of process simulation do not evaluate adequately the effects of the above considered phenomena.

AB - The diffusion of B implanted in Si has been investigated at different concentrations in a wide range of experimental conditions (temperature from 800 to 1000 °C and time from 10 s to 8 h) by using furnace and rapid thermal treatments. In particular, the transient enhanced diffusion induced by the implantation damage in the early phase of the annealing and the precipitation occurring in concomitance with the diffusion for dopant concentration exceeding the solid solubility have been extensively analyzed. A simulation program taking these phenomena into account has been developed by modifying the supreme iii code. A satisfactory agreement with experimental data has been obtained for all the investigated conditions. The model represents a significative improvement of the diffusion simulation of B implanted in crystalline Si. In fact, the more commonly used codes of process simulation do not evaluate adequately the effects of the above considered phenomena.

UR - http://www.scopus.com/inward/record.url?scp=21544453382&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21544453382&partnerID=8YFLogxK

U2 - 10.1063/1.348740

DO - 10.1063/1.348740

M3 - Article

AN - SCOPUS:21544453382

VL - 69

SP - 2135

EP - 2142

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 4

ER -