Diffusion of boron in silicon during post-implantation annealing

S. Solmi, F. Baruffaldi, R. Canteri

Research output: Contribution to journalArticle

Abstract

The diffusion of B implanted in Si has been investigated at different concentrations in a wide range of experimental conditions (temperature from 800 to 1000 °C and time from 10 s to 8 h) by using furnace and rapid thermal treatments. In particular, the transient enhanced diffusion induced by the implantation damage in the early phase of the annealing and the precipitation occurring in concomitance with the diffusion for dopant concentration exceeding the solid solubility have been extensively analyzed. A simulation program taking these phenomena into account has been developed by modifying the supreme iii code. A satisfactory agreement with experimental data has been obtained for all the investigated conditions. The model represents a significative improvement of the diffusion simulation of B implanted in crystalline Si. In fact, the more commonly used codes of process simulation do not evaluate adequately the effects of the above considered phenomena.

Original languageEnglish
Pages (from-to)2135-2142
Number of pages8
JournalJournal of Applied Physics
Volume69
Issue number4
DOIs
Publication statusPublished - 1991

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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