An inductively coupled plasma machine has been modified to be able to apply working powers in the order of 1 kW, thus switching to the real inductive H-mode. The plasma is generated by applying a 13.56 MHz radio-frequency to a λ/4 antenna outside the plasma chamber in low pressure conditions. The working gas is argon at pressure in the range from 10 to 100 Pa. With this high power source we have been able to perform plasma etching on a poly(vinyl-chloride) (PVC) film. In particular the effect of the plasma is the selective removal of hydrogen and chlorine from the sample surface. The action of the high power plasma on the sample has been proved to be much more effective than that of the low power one. Results similar to those obtained with the low power machine at about 300 W for 120 min, have been obtained with the high power source at about 600 W for 30 min. The superficial generation of a conductive layer of double C=C bonds was obtained. The samples have been investigated by means of ATR spectroscopy, FIB/SEM microscopy and micro-electrical measurements, which revealed the change in charge conductivity.
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics