Abstract
Purpose: To investigate the use of metal oxide silicon field effect transistors (MOSFETs) as in vivo dosimetry detectors during electron beams at high dose-per-pulse intraoperative radiotherapy. Methods and Materials: The MOSFET system response in terms of reproducibility, energy, dose rate and temperature dependence, dose-linearity from 1 to 25 Gy, angular response, and dose perturbation was analyzed in the 6-9-MeV electron beam energy range produced by an intraoperative radiotherapy-dedicated mobile accelerator. We compared these with the 6- and 9-MeV electron beams produced by a conventional accelerator. MOSFETs were also used in clinical dosimetry. Results: In experimental conditions, the overall uncertainty of the MOSFET response was within 3.5% (±SD). The investigated electron energies and the dose rate did not significantly influence the MOSFET calibration factors. The dose perturbation was negligible. In vivo dosimetry results were in accordance with the predicted values within ±5%. A discordance occurred either for an incorrect position of the dosimeter on the patient or when a great difference existed between the clinical and calibration setup, particularly when performing exit dose measurements. Conclusion: Metal oxide silicon field effect transistors are suitable for in vivo dosimetry during intraoperative radiotherapy because their overall uncertainty is comparable to the accuracy required in target dose delivery.
| Original language | English |
|---|---|
| Pages (from-to) | 952-960 |
| Number of pages | 9 |
| Journal | International Journal of Radiation Oncology Biology Physics |
| Volume | 63 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - Nov 1 2005 |
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Keywords
- High dose-per-pulse
- In vivo dosimetry
- IORT
- MOSFET
ASJC Scopus subject areas
- Oncology
- Radiology Nuclear Medicine and imaging
- Radiation
Cite this
In vivo dosimetry with MOSFETs : Dosimetric characterization and first clinical results in intraoperative radiotherapy. / Consorti, Rita; Petrucci, Assunta; Fortunato, Falbo; Soriani, Antonella; Marzi, Simona; Iaccarino, Giuseppe; Landoni, Valeria; Benassi, Marcello.
In: International Journal of Radiation Oncology Biology Physics, Vol. 63, No. 3, 01.11.2005, p. 952-960.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - In vivo dosimetry with MOSFETs
T2 - Dosimetric characterization and first clinical results in intraoperative radiotherapy
AU - Consorti, Rita
AU - Petrucci, Assunta
AU - Fortunato, Falbo
AU - Soriani, Antonella
AU - Marzi, Simona
AU - Iaccarino, Giuseppe
AU - Landoni, Valeria
AU - Benassi, Marcello
PY - 2005/11/1
Y1 - 2005/11/1
N2 - Purpose: To investigate the use of metal oxide silicon field effect transistors (MOSFETs) as in vivo dosimetry detectors during electron beams at high dose-per-pulse intraoperative radiotherapy. Methods and Materials: The MOSFET system response in terms of reproducibility, energy, dose rate and temperature dependence, dose-linearity from 1 to 25 Gy, angular response, and dose perturbation was analyzed in the 6-9-MeV electron beam energy range produced by an intraoperative radiotherapy-dedicated mobile accelerator. We compared these with the 6- and 9-MeV electron beams produced by a conventional accelerator. MOSFETs were also used in clinical dosimetry. Results: In experimental conditions, the overall uncertainty of the MOSFET response was within 3.5% (±SD). The investigated electron energies and the dose rate did not significantly influence the MOSFET calibration factors. The dose perturbation was negligible. In vivo dosimetry results were in accordance with the predicted values within ±5%. A discordance occurred either for an incorrect position of the dosimeter on the patient or when a great difference existed between the clinical and calibration setup, particularly when performing exit dose measurements. Conclusion: Metal oxide silicon field effect transistors are suitable for in vivo dosimetry during intraoperative radiotherapy because their overall uncertainty is comparable to the accuracy required in target dose delivery.
AB - Purpose: To investigate the use of metal oxide silicon field effect transistors (MOSFETs) as in vivo dosimetry detectors during electron beams at high dose-per-pulse intraoperative radiotherapy. Methods and Materials: The MOSFET system response in terms of reproducibility, energy, dose rate and temperature dependence, dose-linearity from 1 to 25 Gy, angular response, and dose perturbation was analyzed in the 6-9-MeV electron beam energy range produced by an intraoperative radiotherapy-dedicated mobile accelerator. We compared these with the 6- and 9-MeV electron beams produced by a conventional accelerator. MOSFETs were also used in clinical dosimetry. Results: In experimental conditions, the overall uncertainty of the MOSFET response was within 3.5% (±SD). The investigated electron energies and the dose rate did not significantly influence the MOSFET calibration factors. The dose perturbation was negligible. In vivo dosimetry results were in accordance with the predicted values within ±5%. A discordance occurred either for an incorrect position of the dosimeter on the patient or when a great difference existed between the clinical and calibration setup, particularly when performing exit dose measurements. Conclusion: Metal oxide silicon field effect transistors are suitable for in vivo dosimetry during intraoperative radiotherapy because their overall uncertainty is comparable to the accuracy required in target dose delivery.
KW - High dose-per-pulse
KW - In vivo dosimetry
KW - IORT
KW - MOSFET
UR - http://www.scopus.com/inward/record.url?scp=25844482617&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=25844482617&partnerID=8YFLogxK
U2 - 10.1016/j.ijrobp.2005.02.049
DO - 10.1016/j.ijrobp.2005.02.049
M3 - Article
C2 - 16199324
AN - SCOPUS:25844482617
VL - 63
SP - 952
EP - 960
JO - International Journal of Radiation Oncology Biology Physics
JF - International Journal of Radiation Oncology Biology Physics
SN - 0360-3016
IS - 3
ER -