Low-voltage self-assembled monolayer field-effect transistors on flexible substrates

Thomas Schmaltz; Atefeh Y. Amin; Artoem Khassanov; Timo Meyer-Friedrichsen; Hans Georg Steinrück; Andreas Magerl; Juan José Segura; Kislon Voitchovsky; Francesco Stellacci; Marcus Halik

doi:10.1002/adma.201301176

Low-voltage self-assembled monolayer field-effect transistors on flexible substrates

Thomas Schmaltz, Atefeh Y. Amin, Artoem Khassanov, Timo Meyer-Friedrichsen, Hans Georg Steinrück, Andreas Magerl, Juan José Segura, Kislon Voitchovsky, Francesco Stellacci, Marcus Halik

Fondazione IRCCS Istituto Neurologico "C. Besta"

Research output: Contribution to journal › Article › peer-review

Abstract

Self-assembled monolayer field-effect transistors (SAMFETs) of BTBT functionalized phosphonic acids are fabricated. The molecular design enables device operation with charge carrier mobilities up to 10^-2 cm ² V^-1 s^-1 and for the first time SAMFETs which operate on rough, flexible PEN substrates even under mechanical substrate bending.

Original language	English
Pages (from-to)	4511-4514
Number of pages	4
Journal	Advanced Materials
Volume	25
Issue number	32
DOIs	https://doi.org/10.1002/adma.201301176
Publication status	Published - Aug 27 2013

Keywords

flexible substrate
low voltage operation
molecular electronics
monolayer transistor
self-assembly

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201301176

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Low-voltage self-assembled monolayer field-effect transistors on flexible substrates. / Schmaltz, Thomas; Amin, Atefeh Y.; Khassanov, Artoem; Meyer-Friedrichsen, Timo; Steinrück, Hans Georg; Magerl, Andreas; Segura, Juan José; Voitchovsky, Kislon; Stellacci, Francesco; Halik, Marcus.

In: Advanced Materials, Vol. 25, No. 32, 27.08.2013, p. 4511-4514.

Research output: Contribution to journal › Article › peer-review

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AU - Magerl, Andreas

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