Reliability characterization and FEM modeling of power devices under repetitive power pulsing

F. Pozzobon, D. Paci, G. Pizzo, A. Buri, S. Morin, F. Carace, A. Andreini, D. Gastaldi, E. Bertarelli, R. Lucchini, P. Vena

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work a combined experimental/numerical approach to describe the thermo-mechanical behavior of power devices under repetitive power pulsing is presented. Stress tests have been carried out on power DMOS implemented in Smart Power BCD technology with different Back-End Of Line (BEOL) schemes, including, for the first time, full Copper. Mechanical laboratory nano-indentation tests have been used to determine constituent properties of the metal layers. Thermo-mechanical 3D FEM modeling has been used to simulate a multi-cycle thermal loading of a whole power device with its package. Results from simulation have been qualitatively compared to experimental results.

Original languageEnglish
Title of host publicationIEEE International Reliability Physics Symposium Proceedings
DOIs
Publication statusPublished - 2013
Event2013 IEEE International Reliability Physics Symposium, IRPS 2013 - Monterey, CA, United States
Duration: Apr 14 2013Apr 18 2013

Other

Other2013 IEEE International Reliability Physics Symposium, IRPS 2013
CountryUnited States
CityMonterey, CA
Period4/14/134/18/13

Keywords

  • active cycling
  • power devices
  • Reliability
  • thermomechanical fatigue

ASJC Scopus subject areas

  • Engineering(all)

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