Silicon carbide detectors for in vivo dosimetry

Giuseppe Bertuccio, Donatella Puglisi, Daniele Macera, Riccardo Di Liberto, Massimiliano Lamborizio, Laura Mantovani

Research output: Contribution to journalArticle

Abstract

Semiconductor detectors for in vivo dosimetry have served in recent years as an important part of quality assurance for radiotherapy. Silicon carbide (SiC) can represent a better semiconductor with respect to the more popular silicon (Si) thanks to its physical characteristics such as wide bandgap, high electron saturation velocity, lower effective atomic number, and high radiation resistance to X and gamma rays. In this article we present an investigation aimed at characterizing 4H-SiC epitaxial Schottky diodes as in vivo dosimeters. The electrical characterization at room temperature showed ultra low leakage current densities as low as 0.1 pA/cm2 at 100 V bias with negligible dependence on temperature. The SiC diode was tested as radiotherapy dosimeter using 6 MV photon beams from a linear accelerator in a typical clinical setting. Collected charge as a function of exposed radiation dose were measured and compared to three standard commercially available silicon dosimeters. A sensitivity of 23 nC/Gy with linearity errors within ± 0.5% and time stability of 0.6% were achieved. No negligible effects on the diode I-V characteristics after irradiation were observed.

Original languageEnglish
Article number6782291
Pages (from-to)961-966
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume61
Issue number2
DOIs
Publication statusPublished - 2014

Keywords

  • Dosimeters
  • Dosimetry
  • Semiconductor radiation detectors
  • Silicon carbide
  • X-ray detectors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Nuclear Energy and Engineering
  • Nuclear and High Energy Physics

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